Method for measuring FET characteristics

ABSTRACT

A coefficient indicating the relationship between a measurement voltage of voltage measuring unit and a voltage drop in a drain bias voltage due to drain current is determined based on an S parameter of a bias tee and an input impedance of the measuring unit. A voltage drop at the drain is determined from the coefficient. Based on the determined voltage drop, a drain bias voltage actually applied to the drain of an FET is determined. Also, a coefficient for converting the measurement voltage of the measuring unit into a drain current is determined based on an S parameter of a two-terminal-pair network of the bias tee and the input impedance of the voltage measuring unit. Based on the determined coefficient, a drain current actually flowing in the FET is determined.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to an FET (field effect transistor) characteristic measurement method in which a pulse voltage output from a pulse generator is applied to the gate of an FET in order to measure drain current flowing through the FET. More specifically, the present invention relates to a method for accurately measuring a voltage applied to the drain of the FET and the drain current.

2. Description of the Related Art

Conventionally, the IV (current-voltage) characteristics of an FET are determined by applying a predetermined DC voltage to the gate of the FET while a predetermined bias voltage is applied to the drain of the FET.

However, the known approach in which the DC voltage is applied to the gate has the following problems.

When the known measurement approach is used for measuring the IV characteristics of SOI (silicon on insulator) MOSFETs, strained-silicon MOSFETs, or the like, reliable measurement results of the IV characteristics may not be obtained due to a self-heating phenomenon of the FETs.

When the known measurement approach is used for measuring the IV characteristics of MOSFETs using high-k (high dielectric constant) gate insulators, reliable measurement results of the IV characteristics may not be obtained since electrons are trapped in defects in the insulator films, thus reducing the drain current driving force.

Accordingly, it has been proposed to apply a measuring method in which a short-duration pulse is applied to the gate of the FET (e.g., refer to K. A. Jenkins and J. Y-C. Sun, IEEE Electron Device Letters, Vol. 16, No. 4, April 1995, pp. 145 to 147). With such a measuring method, measurement results that are not affected by the self-heating can be obtained for MOSFETs employing SOI and strained silicon. Furthermore, with respect to MOSFETs using high-k gate insulators, IV characteristics that are close to these under actual operational conditions can be obtained (since microprocessors using the MOSFETs have internal circuits driven by pulses, not DC), without being affected by, for example, a reduction in a drain-current driving force caused by electron trapping in insulator defects.

When the measurement method using short-duration pulses is employed, a so-called bias tee is used. An DC (direct current) input of the bias tee is connected to a DC voltage source, a bias output of the bias tee is connected to the drain of an FET, and an AC output of the bias tee is connected to an input of a measuring apparatus, such as an oscilloscope. When the short-duration pulse is input to the gate of the FET, drain current generated in a pulsed manner is input to the measuring apparatus via the AC output of the bias tee and the current is then converted by the input impedance of the measuring apparatus into a voltage.

From a high-frequency point of view, the input impedance of the measuring apparatus acts as a shunt resistor interposed between the drain of the FET and the DC voltage source. Thus, when the drain current is generated, the drain bias voltage of the FET decreases because of a voltage drop caused by the input impedance. In a measuring system including the bias tee, the FET, and the measuring apparatus, a drop in the drain bias voltage can also occur because of impedance due to other elements, such as cables.

However, in the known measuring method, the value of the drain bias voltage corresponding to a measured drain current is regarded as the value of a voltage output from the DC voltage source during the measurement of the drain current (i.e., is regarded as the value of the bias output voltage of the bias tee), that is, a voltage drop caused by the input impedance of the measuring apparatus and so on is not taken into account. Therefore, the measured drain current is not based on an actual bias voltage of the drain terminal, thus causing a problem in that accurate measurement results of IV characteristics cannot be obtained.

In addition, in the known measuring method, the drain current may not be accurately detected because of current leaking from the bias tee and so on, thus making it difficult to obtain accurate measurements results of IV characteristics.

OBJECT AND SUMMARY OF THE INVENTION

Accordingly, an object of the present invention is to provide an FET-characteristic measuring method that is capable of more accurately measuring the IV characteristics of SOI (silicon on insulator) MOSFETs, strained-silicon MOSFETs, MOSFETs employing high-k (high dielectric constant) gate insulators, or the like.

The present invention provides an FET-characteristic measuring method in which a bias voltage output from a bias output terminal of a bias tee is applied to a drain of an FET and a pulse output from a pulse generator is applied to a gate of the FET to generate drain current in the FET; the generated drain current is converted by an input impedance of voltage measuring unit, connected to an AC output terminal of the bias tee, into a corresponding voltage; and the converted voltage is measured by the voltage measuring unit. The measuring method includes: a step of determining a coefficient indicating a relationship between a measurement voltage of the voltage measuring unit and a voltage drop in the bias voltage due to the drain current, based on an S parameter of a two-terminal pair network of the bias tee and the input impedance of the voltage measuring unit; the step of determining the voltage drop corresponding to the measurement voltage of the voltage measuring unit, based on the coefficient; and determining a value of a bias voltage actually applied to the drain of the FET, based on the determined voltage drop.

The coefficient determining step can include: a step of determining Y parameters corresponding to each order of a Fourier series for the pulse output from the pulse generator, based on the S parameters for multiple frequencies and the input impedance of the voltage measuring unit; and a step of determining the coefficient, based on the Y parameters and the Fourier series.

The coefficient can be determined for each of multiple pulses having different pulse widths from each other, the multiple pulses being output from the pulse generator. In this case, relationships between the pulse widths of the multiple pulses and the coefficients corresponding to the pulse widths are stored in a table in storage.

When a pulse having a pulse width different from the pulse widths of the multiple pulses is output from the pulse generator, the coefficient corresponding to the pulse output from the pulse generator can be obtained by interpolating the contents of the table.

Preferably, the voltage measuring unit is a digital oscilloscope.

In order to achieve the foregoing object, the present invention further provides an FET-characteristic measuring method in which a bias voltage output from a bias output terminal of a bias tee is applied to a drain of an FET and a pulse output from a pulse generator is applied to a gate of the FET to generate drain current in the FET; the generated drain current is converted by an input impedance of voltage measuring unit, connected to an AC output terminal of the bias tee, into a corresponding voltage; and the converted voltage is measured by the voltage measuring unit. The measuring method includes: a step of determining a coefficient for converting a measurement voltage of the voltage measuring unit into the drain current, based on an S parameter of a two-terminal-pair network of the bias tee and the input impedance of the voltage measuring unit; and a step of determining a drain current actually flowing in the FET, based on the measurement voltage of the voltage measuring unit and the coefficient.

The coefficient determining step can include a step of determining a Z parameter corresponding to a Fourier coefficient of each order for the pulse output from the pulse generator, based on the S parameters for multiple frequencies and the input impedance of the voltage measuring unit; and a step of determining the coefficient, based on the Z parameter and a Fourier series.

The coefficient can be determined for each of multiple pulses having different pulse widths from each other, the multiple pulses being output from the pulse generator. In this case, relationships between the pulse widths of the multiple pulses and the coefficients corresponding to the pulse widths are stored in a table in storage.

When a pulse having a pulse width different from the pulse widths of the multiple pulses is output from the pulse generator, the coefficient corresponding to the pulse output from the pulse generator can be obtained by interpolating the contents of the table.

Preferably, the voltage measuring unit is a digital oscilloscope.

In order to achieve the foregoing object, the present invention further provides an FET-characteristic measuring method in which a bias voltage output from a bias output terminal of a bias tee is applied to a drain of an FET and a pulse output from a pulse generator is applied to a gate of the FET to generate drain current in the FET; the generated drain current is converted by an impedance of a shunt resistor, connected to an AC output terminal of the bias tee, into a corresponding voltage; and the converted voltage is measured by voltage measuring unit connected to the AC output terminal. The measuring method includes: a step of determining a coefficient indicating a relationship between a measurement voltage of the voltage measuring unit and a voltage drop in the bias voltage due to the drain current, based on an S parameter of a two-terminal pair network of the bias tee and the impedance of the shunt resistor; a step of determining the voltage drop corresponding to the measurement voltage of the voltage measuring unit, based on the coefficient; and a step of determining a value of a bias voltage actually applied to the drain of the FET, based on the determined voltage drop.

In order to achieve the foregoing object, the present invention further provides an FET-characteristic measuring method in which a bias voltage output from a bias output terminal of a bias tee is applied to a drain of an FET and a pulse output from a pulse generator is applied to a gate of the FET to generate drain current in the FET; the generated drain current is converted by an impedance of a shunt resistor, connected to AC output terminal of the bias tee, into a corresponding voltage; and the converted voltage is measured by voltage measuring unit connected to the AC output terminal. The measuring method includes: a step of determining a coefficient for converting a measurement voltage of the voltage measuring unit into the drain current, based on an S parameter of a two-terminal-pair network of the bias tee and the impedance of the shunt register; and a step of determining a drain current actually flowing in the FET, based on the measurement voltage of the voltage measuring unit and the coefficient.

According to the present invention, based on the S parameter of the bias tee and the input impedance of the voltage measuring unit or the connected shunt register, the coefficient indicating the relationship between the measurement voltage of the voltage measuring unit and a voltage drop in the drain bias voltage due to a drain current is determined. Based on a drain voltage drop obtained from the coefficient, a drain bias voltage actually applied to the drain of an FET is determined. Thus, it is possible to obtain high-accuracy measurement results of IV characteristics.

According to the present invention, based on the S parameter of a two-terminal-pair network of the bias tee and the input impedance of the voltage measuring unit or the connected shunt register, the coefficient for converting the measurement voltage of the voltage measuring unit into a drain current is determined, and based on the coefficient, a drain bias voltage actually flowing in the FET is determined. Thus, it is possible to obtain higher-accuracy measurement results of IV characteristics.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a block diagram schematically showing the configuration of a characteristic measuring system for implementing an FET-characteristic measuring method according to one embodiment of the present invention;

FIG. 2 is a circuit diagram showing a two-terminal-pair network for a drain measuring system;

FIG. 3 is a circuit diagram showing one example of the configuration of a bias tee; and

FIG. 4 is a block diagram schematically showing the configuration of a characteristic measuring system for implementing an FET-characteristic measuring method according to another embodiment of the present invention.

DETAILED DESCRIPTION OF PREFERRED EMBODIMENTS

FIG. 1 is a block diagram schematically showing the configuration of an FET-characteristic measuring system for implementing an FET-characteristic measuring method according to one embodiment of the present invention. In this FET-characteristic measuring system, a short-duration (e.g., 100 ns or less) pulse voltage output from a pulse generator 3 is applied to the gate of an FET 1 to measure the IV (current-voltage) characteristics thereof.

The FET 1 shown in FIG. 1 may be a MOSFET, such as an SOI (silicon on insulator) MOSFET, a strained-silicon MOSFET, or a MOSFET using a high-k (high dielectric constant) gate insulator.

The gate of the FET 1 is connected to the pulse generator 3, and the drain of the FET 1 is connected to a DC voltage source 7 and an oscilloscope 9 (which may be a digital oscilloscope) via a so-called bias tee 5. The bias tee 5 has a bias output 5 a connected to the drain of the FET 1, a DC input 5 b connected to the DC voltage source 7, and an AC output 5 c connected to the oscilloscope 9.

The DC voltage source 7 may be implemented with, for example, an SMU (source measure unit) capable of applying a high-accuracy DC voltage and measuring a current. An example is the SMU equipped in Agilent 4156 manufactured by Agilent Technologies, Inc.

When the FET-characteristic measuring system of this embodiment measures the IV characteristics of the FET 1, a predetermined voltage V_(d) _(—) _(set) is output from the DC voltage source 7 and a predetermined voltage pulse is output from the pulse generator 3. As a result, a pulsed drain current that corresponds to a drain bias voltage V_(d) _(—) _(int) based on the voltage V_(d) _(—) _(set) and corresponds to the voltage of the pulse output from the pulse generator 3 and input to the gate flows in the FET 1.

A DC blocking capacitor 5 d is interposed between the bias output 5 a and the AC output 5 c of the bias tee 5 and an inductor 5 e is interposed between the bias output 5 a and the DC input 5 b. Considering the AC behavior, electrical continuity is established between the bias output 5 a and the AC output 5 c, whereas almost no current flows between the bias output 5 a and the DC input 5 b because of the high impedance.

Thus, the drain current flows through the DC blocking capacitor 5 d and is then converted by the input impedance (which is set to 50Ω in this example) of the oscilloscope 9 into a voltage pulse, the voltage of which is measured by the oscilloscope as a voltage V_(meas).

Drain voltage measurement as described above is performed based on various drain bias voltages and various gate pulse voltages, so that the IV characteristics of the FET 1 are obtained.

As described above, from a high-frequency point of view, the input impedance of the oscilloscope 9 acts as a shunt resistor interposed between the drain of the FET 1 and the DC voltage source 7. Thus, when the drain current flows, the drain bias voltage of the FET 1 decreases due to a voltage drop caused by the input impedance. The drop in the drain bias voltage can also be caused by impedance due to other factors, such as cables contained in a drain measuring system including the bias tee and a measuring apparatus.

Thus, during the measurement of the drain current, an actual drain bias voltage V_(d) _(—) _(int) may differ from the output voltage V_(d) _(—) _(set) of the DC voltage source 7. This means that reliable IV characteristics cannot be obtained when the actual drain bias voltage V_(d) _(—) _(int) is assumed to be the output voltage V_(d) _(—) _(set) of the DC voltage source 7.

Accordingly, in this embodiment, a coefficient for determining a voltage drop at the FET drain due the drain current is determined based on the measurement voltage V_(meas) of the oscilloscope 9 and is used to calculate the actual drain bias voltage V_(d) _(—) _(int), as described below.

Now, when a drain measuring system including a cable from the FET 1 to the bias tee 5, the bias tee 5 itself, and a cable from the bias tee 5 to the oscilloscope 9 is regarded as an unknown two-terminal-pair network shown in FIG. 2, the above-mentioned coefficient is defined in terms of the ratio of an input voltage V_(d) _(—) _(drop) and an output voltage V_(meas) of the two-terminal-pair network.

In FIG. 2, I_(d) indicates the drain current of the FET 1, V_(d) _(—) _(drop) indicates a voltage drop at the drain of the FET 1, V_(meas) indicates the measurement voltage of the oscilloscope 9, I_(meas) indicates the input current of the oscilloscope 9, and Z_(osc) indicates the input impedance of the oscilloscope 9.

When Y parameters Yd of the unknown two-terminal-pair network are used, the relationship between the input voltage V_(d) _(—) _(drop) and the output voltage V_(meas) is given by: $\begin{matrix} {\begin{bmatrix} {- I_{d}} \\ I_{meas} \end{bmatrix} = {\begin{bmatrix} {Yd}_{11} & {Yd}_{12} \\ {Yd}_{21} & {Yd}_{22} \end{bmatrix}\begin{bmatrix} V_{d\_ drop} \\ V_{meas} \end{bmatrix}}} & (1) \end{matrix}$

From this relationship and the relationships I_(meas)=−V_(meas)·Y_(osc) and Y_(osc)=1/Z_(osc), V_(d) _(—) _(drop) is expressed by: $\begin{matrix} {V_{d\_ drop} = {{- \frac{Y_{osc} + {Yd}_{22}}{{Yd}_{21}}}V_{meas}}} & (2) \end{matrix}$

Therefore, a transmission coefficient D_(trans) of the two-terminal-pair network is given by equation (3) below and is used as a coefficient for determining V_(d) _(—) _(drop) from V_(meas). $\begin{matrix} {{Dtrans} = {\frac{V_{meas}}{V_{d\_ drop}} = {- \frac{{Yd}_{21}}{Y_{osc} + {Yd}_{22}}}}} & (3) \end{matrix}$

The voltage drop V_(d) _(—) _(drop) is calculated using the transmission coefficient D_(trans) and is subtracted from the output voltage V_(d) _(—) _(set) of the DC voltage source 7, so that the actual drain bias voltage V_(d) _(—) _(int) during the drain current measurement can be determined.

Next, an actual calculation procedure for obtaining the transmission coefficient D_(trans) will be specifically described.

The transmission coefficient D_(trans) can be obtained by applying, as V_(meas), a pulse voltage having an amplitude of 1 V to the two-terminal-pair network and measuring the amplitude of the voltage V_(d) _(—) _(drop) observed during the voltage application.

As is known, a pulse is composed of a variety of frequency components. What are considered during the calculation of the transmission coefficient D_(trans) are frequency components obtained by Fourier-transforming or Fourier-expanding a pulse having specified parameters (a pulse width Wt, rise time (=fall time) α_(t), cycle T_(t), and timing of measurement point t_(m)), the pulse being supplied from the pulse generator 3 to the FET 1, and frequency characteristics of the drain measuring system including the oscilloscope 9, the cables, and the bias tee 5.

The timing of measurement point of the parameters specified for the pulse refers to time t_(m) at which a voltage is actually measured with reference to the midpoint of the rising edge of the pulse, and is used as follows.

That is, when a voltage pulse corresponding to the drain current is input to the oscilloscope 9, the processor 11 reads, as the measurement voltage V_(meas), a voltage at a point when the predetermined time t_(m) passes from the midpoint of the rising edge of the input voltage pulse.

Consequently, both timings of a measurement point in the width direction of the pulse applied to the gate of the FET 1 and the measurement point of a measurement voltage pulse input to the oscilloscope 9 match each other. Thus, a highly reliable measurement voltage V_(meas) can be obtained by specifying, as the parameter, a timing of measurement point at which the pulse applied to the gate is mostly stable.

For determining the transmission coefficient D_(trans), an S parameter of the drain measuring system and the input impedance Z_(osc) of the oscilloscope 9 are used. The S parameter and the input impedance Z_(osc) are measured for each frequency by using, for example, a network analyzer, and are pre-stored in storage 13 by the processor 11. The processor 11 executes the following calculation procedure.

Y parameters Y_(dn) and Y_(oscn) corresponding to each order of a Fourier series for the pulse having the specified parameters are calculated from the S parameters and the input impedance Z_(osc) of the oscilloscope 9.

That is, the S parameters for the respective frequencies are converted using the equation (4) below into Y parameters. $\begin{matrix} {{Y_{11} = {\frac{1}{Z_{0}} \times \left\lbrack \frac{{\left( {1 - S_{11}} \right)\left( {1 + S_{22}} \right)} + {S_{12}S_{21}}}{{\left( {1 + S_{11}} \right)\left( {1 + S_{22}} \right)} - {S_{12}S_{21}}} \right\rbrack}}{Y_{12} = {\frac{1}{Z_{0}} \times \left\lbrack \frac{{- 2}S_{12}}{{\left( {1 + S_{11}} \right)\left( {1 + S_{22}} \right)} - {S_{12}S_{21}}} \right\rbrack}}{Y_{21} = {\frac{1}{Z_{0}} \times \left\lbrack \frac{{- 2}S_{21}}{{\left( {1 + S_{11}} \right)\left( {1 + S_{22}} \right)} - {S_{12}S_{21}}} \right\rbrack}}{Y_{22} = {\frac{1}{Z_{0}} \times \left\lbrack \frac{{\left( {1 + S_{11}} \right)\left( {1 - S_{22}} \right)} + {S_{12}S_{21}}}{{\left( {1 + S_{11}} \right)\left( {1 + S_{22}} \right)} - {S_{12}S_{21}}} \right\rbrack}}} & (4) \end{matrix}$ where Z₀ indicates the characteristic impedance (e.g., 50Ω) of the network analyzer.

For the conversion of the S-parameter into the Y parameter, when the nth-order frequency f_(n) of the Fourier series is lower than the minimum frequency used for the actual measurement of the S parameter, the actual measurement value of the S-parameter at the minimum frequency is directly used. When the frequency f_(n) is higher than the maximum frequency used for the actual measurement of the S parameter, the actual measurement value of the S parameter at the maximum frequency is directly used. Extrapolation in the lower- and higher-limit ranges of the frequencies is not used. This is because actual measurement values in the vicinity of the lower and upper limits vary and thus results determined by such extrapolation may fluctuate.

In actual use of the system shown in FIG. 1, the measurement frequency ranges and the number of measurement points for measurement data of the S parameter in the drain measuring system and the measurement frequency ranges and the number of measurement points for measurement data of the input impedance Z_(osc) of the oscilloscope 9 do not necessarily match each other.

Accordingly, in this embodiment, prior to the determination of the transmission coefficient, the measured input impedance Z_(osc) of the oscilloscope 9 and the S parameter of the drain measuring system are converted into an impedance and a parameter for a frequency corresponding to the Fourier coefficient of each order for a pulse based on a specified condition and then a Y parameter for the frequency of each order is determined.

That is, of frequencies used for measurement of the input impedance Z_(osc) of the oscilloscope 9, a frequency that is lower than and is closest to the nth-order frequency f_(n) of the Fourier coefficient is indicated by f_(m) and a frequency that is higher than and is closest to the frequency f_(n) is indicated by f_(m+1). Further, input impedances measured at the frequencies f_(m) and f_(m+1) are indicated by Z_(oscm) and Z_(oscm+1), respectively.

The input admittance Y_(oscn) at the nth-order frequency f_(n)=n/T_(t) is determined by interpolation, as follows: $\begin{matrix} {{{Yosc}_{n} = {{Yosc}_{m} + {\frac{\left( {{Yosc}_{m + 1} - {Yosc}_{m}} \right)}{\left( {f_{m + 1} - f_{m}} \right)}\left( {f_{n} - f_{m}} \right)}}}{where}{{Yosc}_{m} = \frac{1}{{Zosc}_{m}}}{f_{n} = {n\frac{1}{T_{t}}}}} & (5) \end{matrix}$

In this case, an interpolation equation other than equation (5) can also be used.

Next, a Y parameter Yd of the drain measuring system is expressed as: $\begin{matrix} {{{Yd} = \begin{bmatrix} {{Yd}\quad 11} & {{Yd}\quad 12} \\ {{Yd}\quad 21} & {{Yd}\quad 22} \end{bmatrix}}{{Yd}_{n} = \begin{bmatrix} {{Yd}\quad 11_{n}} & {{Yd}\quad 12_{n}} \\ {{Yd}\quad 21_{n}} & {{Yd}\quad 22_{n}} \end{bmatrix}}} & (6) \end{matrix}$

Then, nth-order Y parameters shown in equation (7) below are determined. $\begin{matrix} {{{{Yd}\quad 11_{n}} = {{{Yd}\quad 11_{m}} + {\frac{\left( {{{Yd}\quad 11_{m + 1}} - {{Yd}\quad 11_{m}}} \right)}{\left( {f_{m + 1} - f_{m}} \right)}\left( {f_{n} - f_{m}} \right)}}}{{{Yd}\quad 21_{n}} = {{{Yd}\quad 21_{m}} + {\frac{\left( {{{Yd}\quad 21_{m + 1}} - {{Yd}\quad 21_{m}}} \right)}{\left( {f_{m + 1} - f_{m}} \right)}\left( {f_{n} - f_{m}} \right)}}}{{{Yd}\quad 12_{n}} = {{{Yd}\quad 12_{m}} + {\frac{\left( {{{Yd}\quad 12_{m + 1}} - {{Yd}\quad 12_{m}}} \right)}{\left( {f_{m + 1} - f_{m}} \right)}\left( {f_{n} - f_{m}} \right)}}}{{{Yd}\quad 22_{n}} = {{{Yd}\quad 22_{m}} + {\frac{\left( {{{Yd}\quad 22_{m + 1}} - {{Yd}\quad 22_{m}}} \right)}{\left( {f_{m + 1} - f_{m}} \right)}\left( {f_{n} - f_{m}} \right)}}}} & (7) \end{matrix}$

The complex Fourier series for the pulse having the specified parameters is expressed by: $\begin{matrix} {{y_{0} = {A_{0} = \frac{w_{t}}{T_{t}}}}{y_{n{({> 0})}} = {C_{n}\left\lbrack {{{Cos}\left( {{n\quad\phi} - {n\frac{w + \alpha}{2}}} \right)} + {{\mathbb{i}sin}\left( {{n\quad\phi} - {n\frac{w + \alpha}{2}}} \right)}} \right\rbrack}}{where}{C_{n} = {\frac{w}{\pi}\frac{\sin\frac{n\quad\alpha}{2}}{\frac{n\quad\alpha}{2}}\frac{\sin\frac{nw}{2}}{\frac{nw}{2}}}}{{w = {2\pi\frac{w_{t}}{T_{t}}}},\quad{\alpha = {2\pi\frac{\alpha_{t}}{T_{t}}}}}{\phi = {2\pi\frac{t_{m}}{T_{t}}}}} & (8) \end{matrix}$

Also, based on equation (3), equation (9) below is given. $\begin{matrix} {{Dtrans}_{n} = {- \frac{{Yd}_{21n}}{Y_{oscn} + {Yd}_{22n}}}} & (9) \end{matrix}$

Therefore, based on the Y parameter calculated from equation (5), the Y parameter Yd_(n) calculated from equation (7), the complex Fourier series expressed by equation (8), and the relationship expressed by equation (9), the transmission coefficient D_(trans) is expressed by: $\begin{matrix} {{{Dtrans} = {\sum\limits_{n = 0}^{\infty}\quad{y_{n} \times {{Dtrans}_{n}}}}}{where}{{\infty \approx {n\quad\max}} = \frac{f_{\max}}{f_{base}}}{f_{\max} = {\frac{1}{\alpha_{t}} \times 5}}{f_{base} = \frac{1}{T_{t}}}} & (10) \end{matrix}$

In this case, approximation is performed using nmax so as to include sufficiently high frequency components. The transmission coefficient D_(trans) is stored in the storage 13 by the processor 11.

Based on the relationship expressed by equation (3) above, the processor 11 determines the drain voltage V_(d) _(—) _(drop) at the drain of the FET 1 from the determined transmission coefficient D_(trans) and the measurement voltage V_(meas) of the oscilloscope 9. In addition, from the voltage drop V_(d) _(—) _(drop) and the output voltage V_(d) _(—) _(set) of the DC voltage source 7, the processor 11 determines the actual drain bias voltage V_(d) _(—) _(int) during the drain current measurement, i.e., a drain bias voltage V_(d) _(—) _(int) corresponding to a drain current I_(d) flowing when the pulse having the specified parameters is applied to the gate of the FET 1.

In this embodiment, a voltage drop V_(d) _(—) _(drop) that is not affected by either of the frequency components of the pulse output from the pulse generator 3, the pulse having specified parameters, and the frequency characteristics of the drain measuring system are determined. Consequently, the drain bias voltage V_(d) _(—) _(int) can be estimated with considerable accuracy.

In practice, as shown in FIG. 3, a resistor 5 f for damping is provided in the bias tee 5. Thus, depending on the size of each inductor 5 e, the bias tee 5 impedance (i.e., impedance obtained when a DC input terminal 5 b side is viewed from the lower end of the lowermost inductor 5 e shown in FIG. 3) with respect to frequency components contained in the pulse does not become large enough relative to the input impedance of the oscilloscope 9. In such a case, since part of the drain current leaks via the bias tee 5, the measurement voltage V_(meas) of the oscilloscope 9 contains an error resulting from the leakage current.

Now, an example for correcting the error will be described.

The two-terminal-pair network of the drain measuring system including the cable from the bias tee 5 to the FET 1, the bias tee 5 itself, and the cable from the bias tee 5 to the oscilloscope 9 is modeled as shown in FIG. 2.

In the two-terminal-pair network, using a Z parameter of the two-terminal-pair network, the relationship between the drain current I_(d) and the voltage V_(d) _(—) _(drop) at the drain side of the FET 1 and the current I_(meas) and the voltage V_(meas) at the oscilloscope 9 side can be expressed as: $\begin{matrix} {\begin{bmatrix} V_{d} \\ V_{meas} \end{bmatrix} = {\begin{bmatrix} Z_{11} & Z_{12} \\ Z_{21} & Z_{22} \end{bmatrix}\begin{bmatrix} {- I_{d}} \\ I_{meas} \end{bmatrix}}} & (11) \end{matrix}$

As described above, I_(d) indicates the drain current of the FET 1, V_(d) _(—) _(drop) indicates a voltage drop at the drain of the FET 1, V_(meas) indicates the measurement voltage of the oscilloscope 9, I_(meas) indicates the input current of the oscilloscope 9, and Z_(osc) indicates the input impedance of the oscilloscope 9.

Based on equation (11) above and the relationship V_(meas)=−I_(meas)×Z_(osc), the drain current I_(d) is given by: $\begin{matrix} {I_{d} = {{- V_{meas}}\frac{Z_{osc} + Z_{22}}{Z_{osc}Z_{21}}}} & (12) \end{matrix}$

Thus, (Z_(osc)Z₂₁)/(Z_(osc)+Z₂₂) can be defined as a coefficient Z_(equiv) for converting a measurement voltage of the two-terminal-pair network into a drain current, as shown below: $\begin{matrix} {Z_{equiv} = \frac{Z_{osc}Z_{21}}{Z_{osc} + Z_{22}}} & (13) \end{matrix}$

From equations (12) and (13), the drain current I_(d) is expressed as: $\begin{matrix} {I_{d} = {- \frac{V_{meas}}{Z_{equiv}}}} & (14) \end{matrix}$

The coefficient Z_(equiv) is calculated using equation (14) and is stored in the storage 13. Furthermore, the drain current I_(d) is determined based on the coefficient Z_(equiv) and the measurement voltage V_(meas) of the oscilloscope 9, the measurement voltage V_(meas) being obtained during the measurement of the IV characteristics.

The coefficient Z_(equiv) is a conversion impedance of the drain measuring system and is used for converting the drain measuring system into a voltage. The drain current I_(d) calculated from equation (14) is more reliable than a conversion impedance using only the input impedance Z_(osc) of the oscilloscope 9. That is, even when the drain current I_(d) leaks to the bias tee 5 side, the drain current I_(d) can be detected accurately.

An actual procedure for calculating the coefficient Z_(equiv) will be described next. This procedure is executed by the processor 11.

As described above, a pulse is composed of a wide variety of frequency components. Thus, what are considered during the calculation of the coefficient Z_(equiv) are frequency components obtained by Fourier-transforming or Fourier-expanding a pulse having specified parameters (a pulse width Wt, rise time (=fall time) α_(t), cycle T_(t), and a timing of the measurement point t_(m)) supplied from the pulse generator 3 to the FET 1 and frequency characteristics of the above-noted drain measuring system.

The coefficient Z_(equiv) is determined from a voltage V_(meas) measured when a pulse current having an amplitude of 1 A based on the pulse having the specified parameters is input, as the drain current I_(d), to the two-terminal-pair network.

Complex Fourier coefficients of a pulse having the specified parameters are used to calculate the coefficient Z_(equiv). For determining the Z parameters, S parameters of the drain measuring system and the input impedance Z_(osc) of the oscilloscope 9 are used.

The S parameters and the input impedance Z_(osc) are measured for individual frequencies by using, for example, a network analyzer (not shown), and are pre-stored in the storage 13 by the processor 11.

Using equation (15) below, the processor 11 converts an S parameter at each measured frequency into a Z parameter: $\begin{matrix} {{Z_{11} = {Z_{0} \times \left\lbrack \frac{{\left( {1 + S_{11}} \right)\left( {1 - S_{22}} \right)} + {S_{12}S_{21}}}{{\left( {1 - S_{11}} \right)\left( {1 - S_{22}} \right)} - {S_{12}S_{21}}} \right\rbrack}}{Z_{12} = {Z_{0} \times \left\lbrack \frac{2S_{12}}{{\left( {1 - S_{11}} \right)\left( {1 - S_{22}} \right)} - {S_{12}S_{21}}} \right\rbrack}}{Z_{21} = {Z_{0} \times \left\lbrack \frac{2S_{21}}{{\left( {1 - S_{11}} \right)\left( {1 - S_{22}} \right)} - {S_{12}S_{21}}} \right\rbrack}}{Z_{22} = {Z_{0} \times \left\lbrack \frac{{\left( {1 - S_{11}} \right)\left( {1 + S_{22}} \right)} + {S_{12}S_{21}}}{{\left( {1 - S_{11}} \right)\left( {1 - S_{22}} \right)} - {S_{12}S_{21}}} \right\rbrack}}} & (15) \end{matrix}$ where Z₀ indicates the characteristic impedance (e.g., 50Ω) of the network analyzer.

Once the Z parameter is obtained, the Z_(equiv) for converting the measurement voltage V_(meas) for each frequency into the drain current is determined based on the obtained Z parameter and the input impedance of the oscilloscope 9, as described below.

In actual use of the system shown in FIG. 1, the measurement frequency range and the number of measurement points for the measurement data of the S parameters of the drain measuring system and the measurement frequency range and the number of measurement points for measurement data of the input impedance Z_(osc) of the oscilloscope 9 do not necessarily match each other.

Accordingly, in this embodiment, prior to the calculation of the coefficient Z_(equiv), the actually measured input impedance Z_(osc) of the oscilloscope 9 and the S parameter of the drain measuring system are first converted into an impedance and a parameter for a frequency corresponding to the Fourier coefficient of each order for a pulse having specified parameters (conditions) and then the coefficient Z_(equiv) for the frequency of each order is determined.

The Fourier series for the pulse having the specified parameters can be expressed as: $\begin{matrix} {{y_{0} = {A_{0} = \frac{w_{t}}{T_{t}}}}{y_{n{({> 0})}} = {C_{n}\left\lbrack {{{Cos}\left( {{n\quad\phi} - {n\frac{w + \alpha}{2}}} \right)} + {i\quad{\sin\left( {{n\quad\phi} - {n\frac{w + \alpha}{2}}} \right)}}} \right\rbrack}}{where}{C_{n} = {\frac{w}{\pi}\frac{\sin\quad\frac{n\quad\alpha}{2}}{\frac{n\quad\alpha}{2}}\frac{\sin\frac{nw}{2}}{\frac{nw}{2}}}}{{w = {2\pi\frac{w_{t}}{T_{t}}}},{\alpha = {2\pi\frac{\alpha_{t}}{T_{t}}}}}{\phi = {2\pi\frac{t_{m}}{T_{t}}}}} & (16) \end{matrix}$

For the conversion of the S-parameter into the Z parameter, when the nth-order frequency f_(n) of the Fourier series is lower than the minimum frequency used for the actual measurement of the S parameter, the actual measurement value of the S-parameter at the minimum frequency is directly used. When the frequency f_(n) is higher than the maximum frequency used for the actual measurement of the S parameter, the actual measurement value of the S parameter at the maximum frequency is directly used. Extrapolation in the lower- and higher-limit ranges of the frequencies is not used. This is because actual measurement values in the vicinity of the lower and upper limits vary and thus results determined by such extrapolation may fluctuate.

Now, of the frequencies used for measurement of the input impedance Z_(osc) of the oscilloscope 9, a frequency that is lower than and is closest to the nth-order frequency f_(n) of the Fourier coefficient is indicated by f_(m), and a frequency that is higher than and is closest to the frequency f_(n) is indicated by f_(m+1). Further, input impedances measured at the frequencies f_(m) and f_(m+1) are indicated by Z_(oscm) and Z_(oscm+1), respectively. In this case, the input admittance Y_(oscn) at the nth-order frequency f_(n)=n/T_(t) is determined by interpolation, as follows: $\begin{matrix} {{{Zosc}_{n} = {{Zosc}_{m} + {\frac{\left( {{Zosc}_{m + 1} - {Zosc}_{m}} \right)}{\left( {f_{m + 1} - f_{m}} \right)}\left( {f_{n} - f_{m}} \right)}}}{where}\text{}{f_{n} = {n\frac{1}{T_{t}}}}} & (17) \end{matrix}$

In this case, an interpolation equation other than equation (17) can also be used.

Next, a Z parameter Zd of the drain measuring system is expressed as: $\begin{matrix} {{{Zd} = \begin{bmatrix} {{Zd}\quad 11} & {{Zd}\quad 12} \\ {{Zd}\quad 21} & {{Zd}\quad 22} \end{bmatrix}}{{Zd}_{n}\begin{bmatrix} {{Zd}\quad 11_{n}} & {{Zd}\quad 12_{n}} \\ {{Zd}\quad 21_{n}} & {{Zd}\quad 22_{n}} \end{bmatrix}}} & (18) \end{matrix}$ and the nth-order Z parameters shown below are determined. $\begin{matrix} {{{{Zd}\quad 11_{n}} = {{{Zd}\quad 11_{m}} + {\frac{\left( {{{Zd}\quad 11_{m + 1}} - {{Zd}\quad 11_{m}}} \right)}{\left( {f_{m + 1} - f_{m}} \right)}\left( {f_{n} - f_{m}} \right)}}}{{{Zd}\quad 21_{n}} = {{{Zd}\quad 21_{m}} + {\frac{\left( {{{Zd}\quad 21_{m + 1}} - {{Zd}\quad 21_{m}}} \right)}{\left( {f_{m + 1} - f_{m}} \right)}\left( {f_{n} - f_{m}} \right)}}}{{{Zd}\quad 12_{n}} = {{{Zd}\quad 12_{m}} + {\frac{\left( {{{Zd}\quad 12_{m + 1}} - {{Zd}\quad 12_{m}}} \right)}{\left( {f_{m + 1} - f_{m}} \right)}\left( {f_{n} - f_{m}} \right)}}}{{{Zd}\quad 22_{n}} = {{{Zd}\quad 22_{m}} + {\frac{\left( {{{Zd}\quad 22_{m + 1}} - {{Zd}\quad 22_{m}}} \right)}{\left( {f_{m + 1} - f_{m}} \right)}\left( {f_{n} - f_{m}} \right)}}}} & (19) \end{matrix}$

Since a measurement voltage V_(normal) of the oscilloscope 9 when a pulse current having an amplitude of 1 A flows through the drain of the FET 1 is equal to −I_(d)×Z_(equiv), the use of the Z parameter for the frequency of the Fourier coefficient of each order yields the following relationship: $\begin{matrix} {{{V_{normal}} = {\sum\limits_{n = 0}^{\infty}{y_{n} \times {{Zequiv}_{n}}}}}{where}{{\infty \approx {n\quad\max}} = \frac{f_{\max}}{f_{base}}}{f_{\max} = {\frac{1}{\alpha_{t}} \times 5}}{f_{base} = \frac{1}{T_{t}}}{{Zequiv}_{n} = \frac{{Zosc}_{n}{Zd}\quad 21_{n}}{{Zosc}_{n} + {{Zd}\quad 22_{n}}}}} & (20) \end{matrix}$

Thus, the processor 11 determines V_(normal), based on equation (20), and determines the drain current I_(d), based on V_(normal), the actual measurement voltage V_(meas) of the oscilloscope 9, and equation (21) below. In this case, approximation is performed using nmax so as to include sufficiently high frequency components. $\begin{matrix} {I_{d} = {- \frac{V_{meas}}{V_{normal}}}} & (21) \end{matrix}$

In this embodiment, since the drain current I_(d) is determined based on the coefficient Z_(equiv) that corresponds to the frequency components of the pulse having the specified parameters and corresponds to the frequency characteristics of the drain measuring system, the drain current I_(d) can be detected accurately.

While an embodiment of the present invention has been described above, various changes and modifications can be made thereto.

For example, the transmission coefficient D_(transn) calculated from equation (10) can be determined in advance not only for one pulse having specified parameters (e.g., a pulse width) but also for multiple pulses having specified parameters that are different from each other, i.e., multiple pulses having frequency components that are different from each other. In this case, the transmission coefficients D_(transn) for the multiple pulses are stored, in a table in the storage 13, together with parameters of corresponding pulses. With this arrangement, since the transmission coefficients for the multiple pulses having parameters that are different from each other can be promptly obtained from the table, the time for measuring the IV characteristics can be reduced.

When a specified parameter is different from parameters stored in the table, a transmission coefficient D_(trans) corresponding to the specified parameter can be interpolated using the transmission coefficients D_(trans) stored in the table.

Similarly to the transmission coefficients D_(transn), correction coefficients V_(normal) calculated from equation (20) can be determined in advance, respectively, for multiple pulses having specified parameters that are different from each other and be stored, in a table in the storage 13, together with the parameters of corresponding pulses. When a specified parameter is different from parameters stored in the table, a correction coefficient V_(normal) corresponding to the specified parameter can be interpolated using the correction coefficients V_(normal) stored in the table.

In this embodiment, the storage 13 is connected to the processor 11. The present invention, however, also includes a configuration in which storage provided in the processor 11 is used instead of the storage 13.

The FET-characteristic measuring method according to the present invention can also be implemented by a measuring system shown in FIG. 4. In FIG. 4, elements similar to those shown in FIG. 1 are denoted by the same reference characters.

The system shown in FIG. 4 differs from the system shown in FIG. 1 in that a shunt resistor 8 (50Ω in this example) different from the input impedance of an oscilloscope 19 is connected to a terminal 5 c of the bias tee 5, and the input impedance of the oscilloscope 19 is set to be high (e.g., 1 NΩ).

When the system shown in FIG. 4 is used to measure a drain current and a bias voltage applied to the drain of an FET, the impedance of the shunt resistor 8 acts in the same manner as the input impedance Z_(osc) of the oscilloscope 9 shown in FIG. 1. Thus, redundant descriptions regarding a measuring procedure using the system shown in FIG. 4 are omitted hereinafter.

According to the embodiment using the system shown in FIG. 4, the function of the input impedance Z_(osc) of the oscilloscope 9 in the system shown in FIG. 1 is accomplished by the shunt resistor 8. Thus, the use of a high-accuracy resistor as the shunt resistor 8 can provide accurate measurement results of the IV characteristics. As described above, since the oscilloscope 19 has a high input impedance, the input impedance does not affect the measurement results. 

1. A field-effect-transistor characteristic measuring method in which a bias voltage output from a bias output terminal of a bias tee is applied to a drain of a field-effect transistor and a pulse output from a pulse generator is applied to a gate of the field-effect transistor to generate drain current in the field-effect transistor; the generated drain current is converted by an input impedance of voltage measuring unit, connected to an alternating-current output terminal of the bias tee, into a corresponding voltage; and the converted voltage is measured by the voltage measuring unit, the measuring method comprising: a step of determining a coefficient indicating a relationship between a measurement voltage of the voltage measuring unit and a voltage drop in the bias voltage due to the drain current, based on an S parameter of a two-terminal pair network of the bias tee and the input impedance of the voltage measuring unit; a step of determining the voltage drop corresponding to the measurement voltage of the voltage measuring unit, based on the coefficient; and a step of determining a value of a bias voltage actually applied to the drain of the field-effect transistor, based on the determined voltage drop.
 2. The measuring method according to claim 1, wherein the coefficient determining step comprises: a step of determining Y parameters corresponding to each order of a Fourier series for the pulse output from the pulse generator, based on the S parameters for multiple frequencies and the input impedance of the voltage measuring unit; and a step of determining the coefficient, based on the Y parameters and the Fourier series.
 3. The measuring method according to claim 1, wherein the coefficient is determined for each of multiple pulses having different pulse widths from each other, the multiple pulses being output from the pulse generator, and relationships between the pulse widths of the multiple pulses and the coefficients corresponding to the pulse widths are stored in a table in storage.
 4. The measuring method according to claim 3, wherein, when a pulse having a pulse width different from the pulse widths of the multiple pulses is output from the pulse generator, the coefficient corresponding to the pulse output from the pulse generator is obtained by interpolating the contents of the table.
 5. The measuring method according to claim 1, wherein the voltage measuring unit comprises a digital oscilloscope.
 6. A field-effect-transistor characteristic measuring method in which a bias voltage output from a bias output terminal of a bias tee is applied to a drain of a field-effect transistor and a pulse output from a pulse generator is applied to a gate of the field-effect transistor to generate drain current in the field-effect transistor; the generated drain current is converted by an input impedance of voltage measuring unit, connected to an alternating-current output terminal of the bias tee, into a corresponding voltage; and the converted voltage is measured by the voltage measuring unit, the measuring method comprising: a step of determining a coefficient for converting a measurement voltage of the voltage measuring unit into the drain current, based on an S parameter of a two-terminal-pair network of the bias tee and the input impedance of the voltage measuring unit; and a step of determining a drain current actually flowing in the field-effect transistor, based on the measurement voltage of the voltage measuring unit and the coefficient.
 7. The measuring method according to claim 6, wherein the coefficient determining step comprises: a step of determining a Z parameter corresponding to a Fourier coefficient of each order for the pulse output from the pulse generator, based on the S parameters for multiple frequencies and the input impedance of the voltage measuring unit; and a step of determining the coefficient, based on the Z parameter and a Fourier series.
 8. The measuring method according to claim 6, wherein the coefficient is determined for each of multiple pulses having different pulse widths from each other, the multiple pulses being output from the pulse generator, and relationships between the pulse widths of the multiple pulses and the coefficients corresponding to the pulse widths are stored in a table in storage.
 9. The measuring method according to claim 8, wherein, when a pulse having a pulse width different from the pulse widths of the multiple pulses is output from the pulse generator, the coefficient corresponding to the pulse output from the pulse generator is obtained by interpolating the contents of the table.
 10. The measuring method according to claim 6, wherein the voltage measuring unit comprises a digital oscilloscope.
 11. A field-effect-transistor characteristic measuring method in which a bias voltage output from a bias output terminal of a bias tee is applied to a drain of a field-effect transistor and a pulse output from a pulse generator is applied to a gate of the field-effect transistor to generate drain current in the field-effect transistor; the generated drain current is converted by an impedance of a shunt resistor, connected to an alternating-current output terminal of the bias tee, into a corresponding voltage; and the converted voltage is measured by voltage measuring unit connected to the alternating-current output terminal, the measuring method comprising: a step of determining a coefficient indicating a relationship between a measurement voltage of the voltage measuring unit and a voltage drop in the bias voltage due to the drain current, based on an S parameter of a two-terminal pair network of the bias tee and the impedance of the shunt resistor; a step of determining the voltage drop corresponding to the measurement voltage of the voltage measuring unit, based on the coefficient; and a step of determining a value of a bias voltage actually applied to the drain of the field-effect transistor, based on the determined voltage drop.
 12. A field-effect-transistor characteristic measuring method in which a bias voltage output from a bias output terminal of a bias tee is applied to a drain of a field-effect transistor and a pulse output from a pulse generator is applied to a gate of the field-effect transistor to generate drain current in the field-effect transistor; the generated drain current is converted by an impedance of a shunt resistor, connected to an alternating-current output terminal of the bias tee, into a corresponding voltage; and the converted voltage is measured by voltage measuring unit connected to the alternating-current output terminal, the measuring method comprising: a step of determining a coefficient for converting a measurement voltage of the voltage measuring unit into the drain current, based on an S parameter of a two-terminal-pair network of the bias tee and the impedance of the shunt register; and a step of determining a drain current actually flowing in the field-effect transistor, based on the measurement voltage of the voltage measuring unit and the coefficient. 